“Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a Si3N4 /SiO2/Si3N4 multilayer for flash memory application”
Home“Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a Si3N4 /SiO2/Si3N4 multilayer for flash memory application”
Home“Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a Si3N4 /SiO2/Si3N4 multilayer for flash memory application”
“Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a Si3N4 /SiO2/Si3N4 multilayer for flash memory application”
저자
Sug Hun Hong, Jae Hyuck Jang, Tae Joo Park, Doo Seok Jeong, Miyoung Kim, and Cheol Seong Hwanga, Jeong Yeon Won
