Miyoung Kim
Career
Education
1998
Ph.D: Arizona State University, Department of Physics
1992
M.S: Seoul National University, Department of Physics
1990
B.S: Seoul National University, Department of Physics
Professional Service
2013-
Seoul National University, Professor
2009-2013
Seoul National University, Associate Professor
2004-2009
Seoul National University, Assistant Professor
2001-2004
AE-Center, Samsung Advanced Institute of Technology, Senior Researcher
1998-2001
Solid State Division, Oak Ridge National Lab, Post-Doc
Contact
College of Engineering, Department of Materials Science and Engineering,
Seoul National University, Seoul 151-742, Republic of Korea
Tel : (+82)-2-880-9239
E-mail : mkim@snu.ac.kr
Mail-stop : 33-220
Research Interests
● Crystal Structure
- Analyzing crystal structure through (scanning) transmission electron microscopy((S)TEM), convergent beam electron diffraction(CBED) and nano-area electron diffraction(NED).
- Atomic structure of materials and interface, grain boundary, defect structure.
● Electronic Structure
- Analyzing electronic structure of the materials through electron energy loss spectroscopy(EELS) and density functional theory(DFT) calculation.
- Electronic structure of interface, grain boundary and defects.
● Nano scale measurement of charge distribution and stress
- Stress measurement, with 10nm resolution and 0.05% accuracy, of nano-structure's domain.
- Measuring stress variance with respect to its position in semiconductor device, Stress measurement in multi layered nano thin film.
● In-situ I-V measurement in TEM
- I-V measurement in TEM with in-situ scanning tunneling microscopy(STM)/TEM double tilt holder.
- Direct measurement of local conductivity in nanomaterials, interface, grain boundary, and defect.
Selected Publications
- Direct observation of d-orbital holes and Cu-Cu bonding in Cu2O, Nature, 401,49 (1999)
- High-frequency micromechanical resonators from aluminium-carbon nanotube nanolaminates, Nat. Mater., 7, 457 (2008)
- Electron energy-loss spectroscopy analysis of HfO2 dielectric films on strained and relaxed SiGe/Si substrates, Appl. Phys. Lett., 92, 232906 (2008)
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory, Nat. Nanotechnol., 5, 148 (2010)
- Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates, Nat. Photonics, 5, 763 (2011)